Semiconductor acceleration sensor

Details Semiconductor acceleration sensor Semiconductor acceleration sensor

1996-12-23

1998-12-01

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257415, 438 52, H01L 2982

Patent

active

058442863

ABSTRACT:
A semiconductor acceleration sensor of a single integral type has a semiconductor substrate, a first nitride layer, a first poly-silicon layer, a second nitride layer, a second poly-silicon layer, a third nitride layer and a third poly-silicon layer which are fabricated in order. A movable section is formed in a part of the second poly-silicon layer placed in a cavity enclosed and sealed by the first nitride layer, the first poly-silicon layer, the second nitride layer, the second poly-silicon layer, the third nitride layer and the third poly-silicon layer. A fabrication method of the semiconductor acceleration sensor of a single integral type is also disclosed.

REFERENCES:
patent: 4571661 (1986-02-01), Hoshino
patent: 5006487 (1991-04-01), Stokes
patent: 5231879 (1993-08-01), Yamamoto
patent: 5508231 (1996-04-01), Ball et al.
patent: 5572057 (1996-11-01), Yamamoto et al.
patent: 5587343 (1996-12-01), Kano et al.

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