Semiconducting diamond light-emitting element

Details Semiconducting diamond light-emitting element Semiconducting diamond light-emitting element

1993-01-04

1994-12-13

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 76, 257 79, 257414, 257431, 257448, 257453, 257754, H01L 29161, H01L 3300, H01L 29205, H01L 2348

Patent

active

053731727

ABSTRACT:
A semiconducting diamond electroluminescence element comprises an electrically conductive substrate, a semiconducting diamond layer formed on the substrate, an insulating diamond layer formed on the semiconducting diamond layer, a front electrode formed on the insulating diamond layer, and a back electrode formed on the conductive substrate in ohmic contact with the same. The color of light to be emitted by the semiconducting diamond electroluminescence element can readily be determined by changing the impurity content in the semiconducting diamond layer. The luminescence intensity of the semiconducting diamond electroluminescence element can readily be changed by changing the voltage applied across the front and back electrodes without entailing dielectric breakdown.

REFERENCES:
patent: 5006914 (1991-04-01), Beetz, Jr.
patent: 5057881 (1991-10-01), Lobentanzer et al.

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