Semicoductor device having defect type compound layer between si

Details Semicoductor device having defect type compound layer between si Semicoductor device having defect type compound layer between si

1994-08-23

1996-04-16

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Including region containing crystal damage

257192, 257197, H01L 2930, H01L 310328, H01L 310336

Patent

active

055085547

ABSTRACT:
Disclosed is a semiconductor device capable of suppressing the generation of dislocations due to the difference in lattice constant by insertion of one or more defect type compound layers in a semiconductor layered structure. The strain generated by the mismatch of the lattice is relaxed by a large amount of vacancies contained in the defect type compound layer, to suppress the generation and the propagation of dislocations, thus inexpensively fabricating a semiconductor device with less deterioration of the characteristics due to defects with good repeatability.

REFERENCES:
patent: 4752818 (1988-06-01), Kushida et al.
patent: 5258631 (1993-11-01), Usagawa et al.

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