Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-03-20
1998-10-13
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 97, 257200, 372 45, 372 46, H01L 3300, H01L 2926
Patent
active
058215557
ABSTRACT:
A semiconductor device includes a first semiconductor layer formed of first semiconductor, a second semiconductor layer formed on the first semiconductor layer and formed of second semiconductor of a group different from a group to which the first semiconductor belongs, and a third semiconductor layer formed between the first and second semiconductor layers, the third semiconductor layer being one of a layer formed of third semiconductor of the same group as the first semiconductor and having an impurity concentration higher than the first semiconductor layer and a layer formed of fourth semiconductor of the same group as the second semiconductor and having an impurity concentration higher than the second semiconductor layer.
REFERENCES:
patent: 5404027 (1995-04-01), Hasse et al.
patent: 5488233 (1996-01-01), Ishikawa et al.
"ZnMgSSe Based Laser Diodes", Journal of Crystal Growth, vol. 150, (1995) S. Itoh, et al. pp. 701-706, MBE VIII '94 Proceeding, Aug. 29-Sep. 2, 1994.
"Ti/Pt/Au Ohmic Contacts To n-Type ZnSe", Japanese Journal of Applied Physics, vol. 31 (1992) Part 2, No. 12B, T. Miyajima, et al., pp. L1743-L1745, Dec. 15, 1992.
Ishikawa Masayuki
Nishikawa Yukie
Onomura Masaaki
Parbrook Peter James
Saito Shinji
Guay John
Kabushiki Kaisha Toshiba
Saadat Mahshid D.
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