Semi-selective chemical vapor deposition

Details Semi-selective chemical vapor deposition Semi-selective chemical vapor deposition

1996-09-23

1999-12-14

King, Roy V.

Coating processes

Nonuniform coating

Applying superposed diverse coatings or coating a coated base

427250, 4272554, 4272557, 42725528, 438637, 438641, 438674, 438675, B05D 136, C23C 1600

Patent

active

060014202

ABSTRACT:
The present invention is a method for semi-selectively depositing a material on a substrate by chemical vapor deposition to form continuous, void-free contact holes or vias in sub-half micron applications. An insulating layer is preferentially deposited on the field of a substrate to delay or inhibit nucleation of metal on the field. A CVD metal is then deposited onto the substrate and grows selectively in the contact hole or via where a barrier layer serves as a nucleation layer. The process is preferably carried out in a multi-chamber system that includes both PVD and CVD processing chambers so that once the substrate is introduced into a vacuum environment, the filling of contact holes and vias occurs without the formation of an oxide layer on a patterned substrate.

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