Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Involving nuclear transmutation doping
Reexamination Certificate
2005-11-15
2005-11-15
Hu, Shouxiang (Department: 2811)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Involving nuclear transmutation doping
C438S516000, C438S522000, C438S931000
Reexamination Certificate
active
06964917
ABSTRACT:
A method is disclosed for producing highly uniform semi-insulating characteristics in single crystal silicon carbide for semiconductor applications. The method includes irradiating a silicon carbide single crystal having net p-type doping and deep levels with neutrons until the concentration of31P equals or exceeds the original net p-type doping while remaining equal to or less than the sum of the concentration of deep levels and the original net p-type doping.
REFERENCES:
patent: 4260448 (1981-04-01), Herzer
patent: 4469527 (1984-09-01), Sugano et al.
patent: 4479829 (1984-10-01), Kniepkamp
patent: 4866005 (1989-09-01), Davis et al.
patent: 4910156 (1990-03-01), Takasu et al.
patent: 4912064 (1990-03-01), Kong et al.
patent: 5119540 (1992-06-01), Kong et al.
patent: RE34861 (1995-02-01), Davis et al.
patent: 5611955 (1997-03-01), Barrett et al.
patent: 6063186 (2000-05-01), Irvine et al.
patent: 6218680 (2001-04-01), Carter, Jr. et al.
patent: 6297522 (2001-10-01), Kordina et al.
patent: 6396080 (2002-05-01), Carter, Jr. et al.
patent: 6403982 (2002-06-01), Carter, Jr. et al.
patent: 6507046 (2003-01-01), Mueller
patent: 2001/0017374 (2001-08-01), Carter, Jr. et al.
patent: 2001/0019132 (2001-09-01), Carter, Jr. et al.
patent: 2001/0023945 (2001-09-01), Carter, Jr. et al.
patent: 2002/0076890 (2002-06-01), Casady et al.
patent: 2002/0167010 (2002-11-01), Mueller
patent: WO 01/06557 (2001-01-01), None
Hans Heissenstein et al.; Radiation Defects and Doping of SiC with Phosphorus by Nuclear Transmutation Doping (NTD); Materials Science Forum; pp. 853-856; vols. 338-342 (2000); Trans Tech Publications, Switzerland.
Hans Heissenstein et al.; Characterization of phosphorus doped n-type 6 H-silicon carbide epitaxial layers produced by nuclear transmutation doping; Journal of Applied Physics: Jun. 15, 1998; pp. 7542-7546; vol. 83, No. 12; American Institute of Physics.
Phosphorous Doped Silicon by Neutron Radiation; www.siliconwafers.net
td-silicon.htm; 1 page.
Carter, Jr. Calvin H.
Hobgood Hudson M.
Jenny Jason R.
Tsvetkov Valeri F.
Cree Inc.
Hu Shouxiang
Summa & Allan P.A.
LandOfFree
Semi-insulating silicon carbide produced by Neutron... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semi-insulating silicon carbide produced by Neutron..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semi-insulating silicon carbide produced by Neutron... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3492380