Semi-conductor device with stacked trench capacitor

Details Semi-conductor device with stacked trench capacitor Semi-conductor device with stacked trench capacitor

1991-10-21

1993-07-06

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257301, 257622, H01L 2968, H01L 2978, H01L 2994

Patent

active

052256987

ABSTRACT:
A semiconductor device and a manufacturing method therefor are disclosed, the semiconductor device including a field oxide layer selectively formed on a semiconductor substrate for defining an active region; an electrically insulated gate electrode; a source and a drain region; a trench formed in the semiconductor substrate; an impurity-doped region formed at the surface of the trench; a first insulating layer a second conductive layer; a dielectric film; a third conductive layer; a fourth conductive layer; an etch blocking layer; a fifth conductive layer The manufacturing method comprises a plurality of processes for forming the above mentioned parts by applying various processes. According to the present invention, as both the impurity-doped polycrystalline silicon layer of the upper portion of the transistor and the inside of the trench including the impurity-doped region are simultaneously used as the first electrode of the capacitor, the surface area of the capacitor electrode can be made larger.

REFERENCES:
patent: 5021842 (1991-06-01), Koyanagi
patent: 5027172 (1991-06-01), Jeon
patent: 5066609 (1991-11-01), Yamamoto
patent: 5089868 (1992-02-01), Motonami

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