Semi-conductor device with a memory cell

Details Semi-conductor device with a memory cell Semi-conductor device with a memory cell

1999-03-09

1999-12-07

Phan, Trong

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, G11C 1100

Patent

active

059994428

ABSTRACT:
A memory cell contains a cross-coupled pair of a first and second transistor. The voltage of the drains are operated in a range between a first and second supply voltage. The back-gates of the first and second transistor are coupled to the connection for the first supply voltage. The device contains a circuit arrangement for deriving a source lying between the voltage of the back-gates and the second supply voltage. The circuit arrangement keeps sources of the first and second transistor at the source voltage.

REFERENCES:
patent: 3662356 (1972-05-01), Michon et al.
patent: 4805148 (1989-02-01), Dichi-Nagle et al.
patent: 5450353 (1995-09-01), Koike
patent: 5600588 (1997-02-01), Kawashima
patent: 5708509 (1998-01-01), Sato et al.

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