Semi-conductor device having circuits on both sides of insulatio

Details Semi-conductor device having circuits on both sides of insulatio Semi-conductor device having circuits on both sides of insulatio

1991-07-24

1993-08-31

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257415, 257417, 257508, 331107A, 333154, H01L 2984, H01L 2996

Patent

active

052412091

ABSTRACT:
A semiconductor device having a semiconductor substrate or an insulation layer, an integrated circuit on each of the opposite sides, or main surfaces, of the semiconductor substrate or insulation layer, and a path for an ultrasound signal interconnecting the integrated circuits. The path is afforded by an ultrasonic transducer on each of the opposite sides of the semiconductor substrate or insulation layer. A plurality of paths may be provided in the same semiconductor substrate or insulation layer without crosstalk by transmitting ultrasound signals having different frequencies through the respective paths. The paths may be one-way or two-way. The ultrasonic transducers each contain a piezoelectric material; the thickness of the piezoelectric material in the ultrasonic transducer, at least on the receiver side in each path, is such that the resonant frequency of the ultrasonic transducer corresponds to the frequency of the ultrasound signal signal transmitted through the path. A plurality of paths through a semiconductor substrate or insulation layer for transmitting corresponding ultrasound signals of the same frequency may be provided between at least one point on one side and more than one point on the other side in a time sharing manner.

REFERENCES:
patent: 4160957 (1979-07-01), Jesinger
patent: 4432007 (1984-02-01), Cady
patent: 4952833 (1990-08-01), Nothnick

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