Self-topcoating photoresist for photolithography

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S907000, C430S910000, C430S326000, C430S311000, C430S330000, C430S313000, C526S242000, C526S245000

Reexamination Certificate

active

07951524

ABSTRACT:
Photoresist additive polymers and photoresist formulations that can be used in immersion lithography without the use of an additional topcoat. The resist compositions include a photoresist polymer, at least one photoacid generator, a solvent; and a photoresist additive polymer. Also a method of forming using photoresist formulations including photoresist additive polymers.

REFERENCES:
patent: 3981987 (1976-09-01), Linke et al.
patent: 4189323 (1980-02-01), Buhr
patent: 4255299 (1981-03-01), Daimon et al.
patent: 4395566 (1983-07-01), Covill et al.
patent: 4472494 (1984-09-01), Hallman et al.
patent: 4551519 (1985-11-01), Oxenrider
patent: 4647651 (1987-03-01), Oxenrider
patent: 4731605 (1988-03-01), Nixon
patent: 5240812 (1993-08-01), Conley et al.
patent: 5580694 (1996-12-01), Allen et al.
patent: 5595861 (1997-01-01), Garza
patent: 5679495 (1997-10-01), Yamachika et al.
patent: 5744537 (1998-04-01), Brunsvold et al.
patent: 5879853 (1999-03-01), Azuma
patent: 6057080 (2000-05-01), Brunsvold et al.
patent: 6191476 (2001-02-01), Takahashi et al.
patent: 6274295 (2001-08-01), Dammel et al.
patent: 6835269 (2004-12-01), Miharu et al.
patent: 6844134 (2005-01-01), Choi et al.
patent: 7067231 (2006-06-01), Harada et al.
patent: 2001/0006736 (2001-07-01), Kuroda et al.
patent: 2002/0168581 (2002-11-01), Takeda et al.
patent: 2002/0182541 (2002-12-01), Gonsalves
patent: 2003/0224283 (2003-12-01), Allen et al.
patent: 2004/0013980 (2004-01-01), Hatakeyama et al.
patent: 2004/0137362 (2004-07-01), De et al.
patent: 2004/0166436 (2004-08-01), Rhodes et al.
patent: 2004/0242821 (2004-12-01), Hatakeyama et al.
patent: 2004/0265735 (2004-12-01), Lee
patent: 2005/0010012 (2005-01-01), Jost et al.
patent: 2005/0014090 (2005-01-01), Hirayama et al.
patent: 2005/0079443 (2005-04-01), Noda et al.
patent: 2005/0089792 (2005-04-01), Huang et al.
patent: 2005/0106494 (2005-05-01), Huang et al.
patent: 2005/0147920 (2005-07-01), Lin et al.
patent: 2005/0153236 (2005-07-01), Lim et al.
patent: 2005/0164502 (2005-07-01), Deng et al.
patent: 2005/0186516 (2005-08-01), Endo et al.
patent: 2005/0233254 (2005-10-01), Hatakeyama et al.
patent: 2005/0250898 (2005-11-01), Maeda et al.
patent: 2005/0266354 (2005-12-01), Li et al.
patent: 2006/0008748 (2006-01-01), Inabe et al.
patent: 2006/0105269 (2006-05-01), Khojasteh et al.
patent: 2006/0177765 (2006-08-01), Harada et al.
patent: 2006/0188804 (2006-08-01), Allen et al.
patent: 2006/0246373 (2006-11-01), Wang
patent: 2007/0254235 (2007-11-01), Allen et al.
patent: WO0216517 (2002-02-01), None
Office Action (Mail Date Dec. 1, 2009) for U.S. Appl. No. 11/380,731, filed Apr. 28, 2006; Confirmation No. 3081.
Office Action (Mail Date Jan. 6, 2010) for U.S. Appl. No. 11/380,744, filed Apr. 28, 2006; Confirmation No. 3108.
Slezak, Mark; “Exploring the needs and tradeoffs for immersion resist topcoating”, Solid State Technology, vol. 47, Issue 7, Jul. 2004. [online]. 5 pages. [retrieved on Jan. 20, 2010]. Retrieved from the Internet: < URL: http://www.electroiq.com/index/display/Semiconductor—Article—Tools—Template/—saveArticle/articles/solid-state-technology/volume-47/issue-7/features/photoresists/exploring-the-needs-and-tradeoffs-for-immersion-resist-topcoating.html >.
Hand, Aaron; “Tricks With Water and Light: 193 nm Extension”; Semiconductor International, vol. 27, Issue 2, Feb. 2004. [online]. 7 pages. [retrieved on Jan. 20, 2010]. Retrieved from the internet: < URL: http://www.semiconductor.net/article/print/209152-Tricks—With—Water—and—Light—193—nm—Extension.php >.
E. Reichmanis et al.; “Chemical Amplification Mechanisms for Microlithography”; Chemistry of Materials 1991 v. 3; pp. 394-407.
Allen, Robert D. et al.; “Design of Protective Topcoats for Immersion Lithography” Journal of Photopolymer Science and Technology 2005 v 18, n 5; pp. 615-619.
Eds. Thompson et al.; Introduction to Microlithography, Washington, DC, American Chemical Society (1994).
Ito, Hiroshi; Advances in Polymer Science 2005, v. 172, pp. 37-245, Chemical Amplification Resists for Microlithography.
Huang et al.; “New 193nm Top Antireflective Coatings for Superior Swing Reduction”; Proceedings of SPIE, vol. 6153, 61530S-1-61530S-8 (2006).
Sanders et al.; Fluoroalcohol Materials with Tailored Interfacial Properties for Immersion Lithography; 12 pages.
Office Action (Mail Date Apr. 21, 2008) for U.S. Appl. No. 11/380,782, filed Apr. 28, 2006; Confirmation No. 3177.
Office Action (Mail Date Aug. 7, 2008) for U.S. Appl. No. 11/380,731, filed Apr. 28, 2006; Confirmation No. 3081.
Office Action (Mail Date Oct. 7, 2008) for U.S. Appl. No. 11/380,744, filed Apr. 28, 2006; Confirmation No. 3108.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Self-topcoating photoresist for photolithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-topcoating photoresist for photolithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-topcoating photoresist for photolithography will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2635839

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.