Self-shielding inductor for multi-layer semiconductor integrated

Active solid-state devices (e.g. – transistors – solid-state diode – With shielding

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257277, 257531, 257665, 257532, H01L 23552

Patent

active

058313311

ABSTRACT:
An inductive structure for an integrated circuit. The inductor has a first turn that shields the other turns of the inductor from a proximate ground plane. Multiple turns are disposed one above another in respective metalization layers of the integrated circuit. The turns are partial loops and are electrically coupled end-to-end with vias. Predetermined ones of the turns have additional portions in different layers. An additional portion of a turn is an electrically conductive strip deposited above the turn in a higher metalization layer and electrically coupled to the turn, thereby increasing the surface area of the turn and decreasing resistance of the turn. A buried n-type loop disposed below the first turn and below the surface of the substrate shields the first turn from the capacitive effects of the substrate.

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Burghartz et al, "Multilevel-Spiral Inductors Using VLSI Interconnect Technology" IEEE Electron Device Letters vol. 17 No. 9, Sep. 1996.

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