Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1987-02-12
1989-10-10
Moffitt, James W.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, 36518901, 365222, G11C 700, G11C 1122
Patent
active
048736643
ABSTRACT:
A semiconductor memory uses cells with a ferroelectric capacitor having one plate coupled to a bit line by a FET and another plate coupled to a plate line. A pulse on the plate line causes the bit line to change voltage based on the state of the cell. A dummy cell arrangement is disclosed using one capacitor per cell, and another embodiment uses two capacitors per cell with no dummy. The cells cooperate with a sense amplifier and timing signals so that they are self restoring.
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Bowler Alyssa H.
Manzo Edward D.
Moffitt James W.
Ramtron Corporation
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