Self-reparable semiconductor and method thereof

Error detection/correction and fault detection/recovery – Data processing system error or fault handling – Reliability and availability

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C712S013000

Reexamination Certificate

active

11594312

ABSTRACT:
A self-reparable semiconductor comprises first and second physical layer devices each including first and second subfunctional units that cooperate to provide first and second ports associated with a multi-bit Gigabit physical layer device. A first spare physical layer device includes first and second subfunctional units. The first sub-functional units are functionally interchangeable. The second sub-functional units are functionally interchangeable. Switching devices communicate with the first and second subfunctional units of the first, second and first spare physical layer devices and replace at least one of the first and second sub-functional units of at least one of the first and second physical layer devices with at least one of the first and second sub-functional units of the first spare physical layer device when the at least one of the first and second sub-functional units is non-operable.

REFERENCES:
patent: 4566102 (1986-01-01), Hefner
patent: 4933895 (1990-06-01), Grinberg et al.
patent: 5204836 (1993-04-01), Reed
patent: 5423024 (1995-06-01), Cheung
patent: 5634067 (1997-05-01), Nagazumi
patent: 5655069 (1997-08-01), Ogawara et al.
patent: 5737766 (1998-04-01), Tan
patent: 5748872 (1998-05-01), Norman
patent: 6145072 (2000-11-01), Shams et al.
patent: 6256758 (2001-07-01), Abramovici et al.
patent: 6337817 (2002-01-01), Horiguchi et al.
patent: 6363021 (2002-03-01), Noh
patent: 6526461 (2003-02-01), Cliff
patent: 6697979 (2004-02-01), Vorbach et al.
patent: 6775529 (2004-08-01), Roo
patent: 6785841 (2004-08-01), Akrout et al.
patent: 6816143 (2004-11-01), Lambert
patent: 7117389 (2006-10-01), Luick
patent: 2002/0133690 (2002-09-01), Yano et al.
patent: 2003/0005377 (2003-01-01), Debenham
patent: 2003/0177425 (2003-09-01), Okin
patent: 2004/0123181 (2004-06-01), Moon et al.
patent: 2004/0153754 (2004-08-01), Chen et al.
patent: 2004/0177298 (2004-09-01), Farnworth et al.
patent: 2004/0193939 (2004-09-01), Tanaka et al.
patent: 0 361 404 (1990-04-01), None
patent: 0 398 552 (1990-11-01), None
patent: 1 170 666 (2002-06-01), None
patent: 1 170 666 (2002-09-01), None
patent: WO 99/32975 (1999-01-01), None
patent: WO 01/39163 (2001-05-01), None
Wang, Minghsien; Cutler, Michal; Su, Stephen Y.H.; Reconfiguration of VLSI/WSI Mesh Array Processors with Two-Level Redundancy, 1989, IEEE, pp. 547-550.
IBM Technical Disclosure Bulletin, Yield and Reliability Enhancement Via Redundancy for VLSI Chips and Wafers, Jun. 1, 1985, pp. 1 and 2.
Notification of First Office Action from the State Intellectual Property Office of PRC dated Mar. 23, 2007 for Chinese Application No. 200410073737.2; 7 pages.
U.S. Appl. No. 10/892,707, filed Jul. 16, 2004, Sehat Sutardja et al.
U.S. Appl. No. 11/196,651, filed Aug. 3, 2005, Sehat Sutardja et al.
U.S. Appl. No. 11/594,537, filed Nov. 8, 2006, Sehat Sutardja et al.
U.S. Appl. No. 11/594,390, filed Nov. 8, 2006, Sehat Sutardja et al.
Communication dated Jun. 6, 2005 from the European Patent Office for European Patent Application No. 03026882.5-2211.
Wang, Minghsien; Cutler, Michal; Su, Stephen Y.H.; Reconfiguration of VLSI/WSI Mesh Array Processors with Two-Level Redundancy, 1989, IEEE, pp. 547-550.
IBM Technical Disclosure Bulletin, Yield and Reliability Enhancement Via Redundancy for VLSI Chips and Wafers, Jun. 1, 1985, pp. 1 and 2.
Notification of First Office Action dated Nov. 25, 2005 for Chinese Patent Application No. 03134804.1; 7 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Self-reparable semiconductor and method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-reparable semiconductor and method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-reparable semiconductor and method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3843721

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.