Self-repair method for nonvolatile memory devices with...

Details Self-repair method for nonvolatile memory devices with... Self-repair method for nonvolatile memory devices with...

2005-09-13

2005-09-13

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S185090, C365S185220, C365S185290, C365S218000

Reexamination Certificate

active

06944072

ABSTRACT:
The memory device has a memory block, formed by a plurality of standard sectors and a redundancy portion; a control circuit, which controls programming and erasing of the data of the memory cells; and a correctness verifying circuit for the data stored in the memory cells. The correctness verifying circuit is enabled by the control circuit and generates an incorrect-datum signal in the event of detection of at least one non-functioning cell. The control circuit moreover activates redundancy, enabling the redundancy portion and storing redundancy data in a redundancy-memory stage in response to detecting an incorrect datum. Various solutions implement column, row and sector redundancy, both in case of erasing and programming.

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