Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2005-07-26
2005-07-26
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S189011, C365S189040, C365S191000, C365S194000
Reexamination Certificate
active
06922366
ABSTRACT:
A self-repair method intervenes at the end of an operation of modification of a nonvolatile memory, selected between programming and erasing, in the event of detection of just one non-functioning cell, and carries out redundancy of the non-functioning cell. To this end, the memory array is divided into a basic portion, formed by a plurality of memory cells storing basic data, and into an in-the-field redundancy portion. The in-the-field redundancy portion is designed to store redundancy data that include a correct content of the non-functioning cell, the address of the non-functioning cell, and an activated redundancy flag. The redundancy is activated only after applying a preset maximum number of modification pulses and uses a redundancy replacement circuit and a redundancy data verification circuit.
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Losavio Aldo
Micheloni Rino
Elms Richard
Iannucci Robert
Jorgenson Lisa K.
Luu Pho M.
Seed IP Law Group PLLC
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