Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Utilizing reflow
Reexamination Certificate
2007-10-16
2007-10-16
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Utilizing reflow
C438S799000, C977S888000
Reexamination Certificate
active
11442900
ABSTRACT:
In accordance with the invention, the structure of a patterned nanoscale or near nanoscale device (“nanostructure”) is repaired and/or enhanced by liquifying the patterned device in the presence of appropriate guiding conditions for a period of time and then permitting the device to solidify. Advantageous guiding conditions include adjacent spaced apart or contacting surfaces to control surface structure and preserve vertically. Unconstrained boundaries to permit smoothing of edge roughness. In an advantageous embodiment, a flat planar surface is disposed overlying a patterned nanostructure surface and the surface is liquified by a high intensity light source to repair or enhance the nanoscale features.
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Chou Stephen Y.
Xia Qiangfei
Polster Lieder Woodruff & Lucchesi LC
Princeton University
Smoot Stephen W.
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