Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-10-07
2008-11-25
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S013000, C438S312000, C438S614000, C438S617000, C438S652000, C438S678000, C257SE21529, C257SE21530, C257SE21627
Reexamination Certificate
active
07456092
ABSTRACT:
According to various exemplary embodiments, a spring device that includes a substrate, a self-releasing layer provided over the substrate and a stressed-metal layer provided over the self-releasing layer is disclosed, wherein an amount of stress inside the stressed-metal layer results in a peeling force that is higher than an adhesion force between the self-releasing layer and the stressed-metal layer. Moreover, a method of manufacturing a spring device, according to various exemplary embodiments, includes providing a substrate, providing a self-releasing layer over the substrate and providing a stressed-metal layer over the self-releasing layer wherein an amount of stress inside the stressed-metal layer results in a peeling force that is higher than an adhesion force between the self-releasing layer and the stressed-metal layer is also disclosed in this invention.
REFERENCES:
patent: 3952404 (1976-04-01), Matunami
patent: 5665648 (1997-09-01), Little
patent: 6103399 (2000-08-01), Smela et al.
patent: 7015584 (2006-03-01), Chow et al.
patent: 7247035 (2007-07-01), Mok et al.
Kataoka et al., “Low Contact-Force and Compliant Mems Probe Card Utilizing Fritting Contact,” IEEE, pp. 364-367, 2002.
Modi et al., “Effect of Adhesive Layer Properties on Interfacial Fracture in Thin-Film High-Density Interconnects,” ECTC, San Diego, California, 2002.
Chow Eugene M.
Fork David K.
Hantschel Thomas
Kosgalwies Sven
Maldonado Julio J.
Oliff & Berridg,e PLC
Palo Alto Research Center Incorporated
Smith Matthew
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