Static information storage and retrieval – Read/write circuit – Data refresh
Patent
1997-03-10
1998-03-03
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
Data refresh
365149, 365190, 36518907, 36523005, G11C 1500
Patent
active
057242968
ABSTRACT:
A self-refreshable dual port dynamic CAM cell which performs a self-refresh operation with no effect on a data read operation and no reduction in performance. The dynamic CAM cell comprises first and second MOS transistors for storing first true and complementary bit data from first true and complementary bit lines, respectively, third and fourth MOS transistors for transferring the data stored in the first and second MOS transistors to a match line in response to the first true and complementary bit data from the first true and complementary bit lines, respectively, a fifth MOS transistor for storing the first true bit data from the first true bit line into the first MOS transistor in response to a signal from a first word line, a sixth MOS transistor for storing the first complementary bit data from the first complementary bit line into the second MOS transistor in response to the signal from the first word line, a seventh MOS transistor for refreshing the data stored in the first MOS transistor with second true bit data from a second true bit line in response to a signal from a second word line, and an eighth MOS transistor for refreshing the data stored in the second MOS transistor with second complementary bit data from a second complementary bit line in response to the signal from the second word line.
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patent: 5126968 (1992-06-01), Hamamoto et al.
patent: 5319589 (1994-06-01), Yamagata et al.
patent: 5642320 (1997-06-01), Jang
Hyundai Electronics Industries Co,. Ltd.
Nguyen Viet Q.
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