Self-referencing ferroelectric memory

Details Self-referencing ferroelectric memory Self-referencing ferroelectric memory

1998-10-13

1999-11-30

Nelms, David

Static information storage and retrieval

Systems using particular element

Ferroelectric

36518909, 365 65, G11C 1122

Patent

active

059954078

ABSTRACT:
A ferroelectric integrated circuit memory includes a memory cell having a ferroelectric capacitor, one electrode of which is connected to a bit line through a transistor and the other electrode of which is connected to a plate line. The plate line is floating at one-half Vcc when the bit line is lowered to zero volts to develop a read voltage on the plate line. A unity gain amplifierthen drives a complementary plate line to the same voltage as the plate line, then the plate line and complementary plate line are connected via a transistor, and the bit line is raised to Vcc to develop a reference voltage. This operation subtracts the read voltage from the reference voltage to develop a net voltage on the complementary plate line. The voltage on the complementary plate line is applied to the output line, compared via a sense amplifier to a one-half Vcc voltage on the input line, and the sense amp then drives the input and output lines to zero and Vcc, depending on whether the developed voltage was greater or less than one-half Vcc.

REFERENCES:
patent: 2876436 (1959-03-01), Anderson
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888733 (1989-12-01), Mobley
patent: 5029128 (1991-07-01), Toda
patent: 5406510 (1995-04-01), Mihara et al.
patent: 5598366 (1997-01-01), Kraus et al.

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