Self protecting NLDMOS, DMOS and extended voltage NMOS devices

Details Self protecting NLDMOS, DMOS and extended voltage NMOS devices Self protecting NLDMOS, DMOS and extended voltage NMOS devices

2005-06-17

2008-08-12

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29021, C438S286000, C438S586000

Reexamination Certificate

active

07411251

ABSTRACT:
In an NLDMOS, DMOS or NMOS active device the ability to withstand snapback under stress conditions is provided by moving the hot spot away from the drain contact region. This is achieved by moving the drain contact region further away from the gate and including an additional n-region next to the drain or an additional floating p-region next to the drain.

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