Self-patterning of photo-active dielectric materials for...

Details Self-patterning of photo-active dielectric materials for... Self-patterning of photo-active dielectric materials for...

2007-08-14

2007-08-14

Ahmed, Shamim (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S627000, C438S636000, C438S637000, C438S700000, C216S017000, C216S018000

Reexamination Certificate

active

11345890

ABSTRACT:
In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be used for the insulation material in which the interconnect pattern is created, this without the use of an overlying exposure mask of photoresist.

REFERENCES:
patent: 5334488 (1994-08-01), Shipley, Jr.
patent: 6349456 (2002-02-01), Dunn et al.
patent: 6429116 (2002-08-01), Wang et al.
patent: 6506979 (2003-01-01), Shelnut et al.
patent: 6521328 (2003-02-01), Lauffer et al.
patent: 6872666 (2005-03-01), Morrow
S. Wolf, Silicon Processing for the VLSI Era, vol. 4, Lattic Press (2002), pp. 645 and 639.

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