Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-14
2006-03-14
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S627000, C438S700000
Reexamination Certificate
active
07012022
ABSTRACT:
In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be used for the insulation material in which the interconnect pattern is created, this without the use of an overlying exposure mask of photoresist.
REFERENCES:
patent: 5334488 (1994-08-01), Shipley, Jr.
patent: 6349456 (2002-02-01), Dunn et al.
patent: 6429116 (2002-08-01), Wang et al.
patent: 6506979 (2003-01-01), Shelnut et al.
patent: 6521328 (2003-02-01), Lauffer et al.
patent: 6872666 (2005-03-01), Morrow
Hsia Liang Choo
Liu Wuping
Zhang Bei Chao
Chartered Semiconductor Manufacturing Ltd.
Pike Rosemary L. S.
Saile George O.
Thai Luan
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