Self mode locked semiconductor laser diode

Coherent light generators – Particular beam control device – Mode locking

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372 38, 372 92, H01S 3098

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047349107

ABSTRACT:
A semiconductor laser diode which operates in an extended optical cavity in conjunction with a negative resistance device such as a Gunn diode for sustained mode-locked operation. The circuit is capable of generating high repetition rate picosecond optical pulses and is suitable for monolithic or hybrid implementation.

REFERENCES:
patent: 4464759 (1984-08-01), Haus et al.
patent: 4667331 (1987-05-01), Alferness et al.
"Subpicosecond Pulses from Passively Mode-Locked GaAs Buried Optical Guide Semiconductor Laser", Appl. Phys. Lett., J. P. van der Ziel et al., 39 (7), 1 Oct. 1981, pp. 525-527.
"Generation of Subpicosecond Pulses from an Actively Mode-Locked GaAs Laser in an External Ring Cavity", Appl. Phys. Lett., J. P. van der Ziel et al, 39 (11), 1 Dec. 1981, pp. 867-869.
"Self-Sustained Picosecond Pulse Generation in a GaAlAs Laser at an Electrically Tunable Repetition Rate by Optoelectronic Feedback", Appl. Phys. Lett., K. Y. Lau et al., 45 (2), 15 Jul. 1984, pp. 124-126.

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