Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-14
2000-08-22
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257174, 257368, 257392, 257393, 257402, 257403, H01L 2362
Patent
active
061076643
ABSTRACT:
A static self-locking micro-circuit-breaker includes a first MOS depletion transistor of a first type connected by its drain to a first main terminal and by its gate to a second main terminal, a second MOS depletion transistor of second type connected by its drain to the second main terminal and by its source to the source of the first transistor, a third MOS depletion transistor of the first type connected by its drain to the first main terminal, by its gate to the second main terminal, and by its source to the gate of the second transistor.
REFERENCES:
patent: 5045902 (1991-09-01), Bancal
patent: 5128823 (1992-07-01), Fujimoto et al.
patent: 5724218 (1998-03-01), Tihanyi
Jalade Jean
Laur Jean-Pierre
Quoirin Jean-Baptiste
Sanchez Jean-Louis
Carroll J.
Galanthay Theodore E.
Morris James H.
SGS-Thomson Microelectronics S.A.
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