Self-latched control circuit for memory program operation

Details Self-latched control circuit for memory program operation Self-latched control circuit for memory program operation

2006-09-19

2006-09-19

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

C365S189050, C365S189090

Reexamination Certificate

active

07110308

ABSTRACT:
A memory programming control circuit is disclosed. The memory programming control circuit is connected to a memory cell via a data line for controlling a programming current in a programming operation of the memory cell. The memory programming control circuit includes a programming enable device connected to a positive power supply for selectively applying a pull-up current on the data line; and a self-latch module connected between the programming enable device and the memory cell for preventing the pull-up current from flowing to the memory cell through the data line, when the memory cell is programmed with a predetermined data bit.

REFERENCES:
patent: 5541883 (1996-07-01), Devanney
patent: 5768206 (1998-06-01), McClure
patent: 6249462 (2001-06-01), Tanaka et al.
patent: 6304495 (2001-10-01), Kim et al.

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