Error detection/correction and fault detection/recovery – Pulse or data error handling – Replacement of memory spare location – portion – or segment
Patent
1993-07-26
2000-05-16
Le, Dieu-Minh T.
Error detection/correction and fault detection/recovery
Pulse or data error handling
Replacement of memory spare location, portion, or segment
714 6, 714 8, 714710, G11C 2900, H02H 305
Patent
active
060651415
ABSTRACT:
An object of the present invention is that, in a semiconductor memory device having both a redundant circuit and a diagnostic circuit, a memory test for detecting positions of defective memory cells in order to replace the defective memory cells with the redundant circuit can be easily carried out by using the diagnostic circuit. A semiconductor memory device of the present invention includes a normal memory portion, a redundant circuit to replace defective memory cells of the normal memory portion by a units of a word line or a bit line, and a self-diagnostic circuit, and further, in order to realize the object, the device includes a defective cell position storage circuit for storing position information of each defective memory cell when the self-diagnostic circuit detects defective memory cells, and an output circuit for converting position information stored in the defective cell position storage circuit into serial data and outputting the position information.
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Fujitsu Limited
Le Dieu-Minh T.
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