Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-11-06
2007-11-06
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S517000, C257SE21704
Reexamination Certificate
active
11113589
ABSTRACT:
A semiconductor fabrication method includes implanting or otherwise introducing a counter doping impurity distribution into a semiconductor top layer of a silicon-on-insulator (SOI) wafer. The top layer has a variable thickness including a first thickness at a first region and a second thickness, greater than the first, at a second region. The impurity distribution is introduced into the top layer such that the net charge deposited in the semiconductor top layer varies linearly with the thickness variation. The counter doping causes the total net charge in the first region to be approximately equal to the net charge in the second region. This variation in deposited net charge leads to a uniform threshold voltage for fully depleted transistors. Fully depleted transistors are then formed in the top layer.
REFERENCES:
patent: 5488001 (1996-01-01), Brotherton
patent: 6222234 (2001-04-01), Imai
patent: 6261878 (2001-07-01), Doyle et al.
Brady, F.T. and Haddad, N.F.; Manufacturability Considerations for Fully Depleted SOI; SOI Conference, 1993 Proceedings, pp. 130-131, 1993 IEEE International.
Noguchi, M., et al.; Back Gate Effects on Threshold Voltage Sensitivity to SOI Thickness in Fully-Depleted SOI MOSFETs; IEEE Electron Device Letters, vol. 22, No. 1, Jan. 2001.
Orlowski Marius K.
Shiho Yasuhito
Chaudhari Chandra
Freescale Semiconductor Inc.
LandOfFree
Self correcting suppression of threshold voltage variation... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Self correcting suppression of threshold voltage variation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self correcting suppression of threshold voltage variation... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3862276