Self-converging over-erase repair method for flash EPROM

Details Self-converging over-erase repair method for flash EPROM Self-converging over-erase repair method for flash EPROM

1995-11-13

1999-01-05

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518522, 3651853, 36518533, G11C 700

Patent

active

058569448

ABSTRACT:
A method of repairing over-erased flash EPROM cells (10) includes erasing the cells (12) and repairing the cells by a self-converging repair with a control gate bias (14), on a column by column basis. The self-converging repair includes grounding the sources (104) of the cells in a column, applying a pulsed bias voltage to the control gates of the cells (110), and a pulsed positive voltage to the drains of the cells (106). By varying the bias voltage at the control gate, the resulting threshold voltage of the cells after repair can be modulated to be greater than or less than an inherent steady state convergence value. Once one column of cells is repaired, the process is repeated on a subsequent column.

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Yamada et al., "A Self-Convergence Erasing Scheme for a Simple Stacked Gate Flash EEPROM", IEDM, pp. 307-310, 1991.

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