Self-converging bottom electrode ring

Details Self-converging bottom electrode ring Self-converging bottom electrode ring

2011-05-03

2011-05-03

Jackson, Jr., Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S900000, C365S163000, C257S002000, C257S004000, C257SE47001, C257SE47005

Reexamination Certificate

active

07935564

ABSTRACT:
A method and memory cell including self-converged bottom electrode ring. The method includes forming a step spacer, a top insulating layer, an intermediate insulating layer, and a bottom insulating layer above a substrate. The method includes forming a step spacer within the top insulating layer and the intermediate insulating layer. The step spacer size is easily controlled. The method also includes forming a passage in the bottom insulating layer with the step spacer as a mask. The method includes forming bottom electrode ring within the passage comprising a cup-shaped outer conductive layer within the passage and forming an inner insulating layer within the cup-shaped outer conductive layer. The method including forming a phase change layer above the bottom electrode ring and a top electrode above the bottom electrode ring.

REFERENCES:
patent: 6791102 (2004-09-01), Johnson et al.
patent: 6972430 (2005-12-01), Casagrande et al.
patent: 7023009 (2006-04-01), Kostylev et al.
patent: 7317201 (2008-01-01), Gutsche et al.
patent: 7476587 (2009-01-01), Lung
patent: 2006/0175599 (2006-08-01), Happ
patent: 2006/0273297 (2006-12-01), Happ
patent: 2006/0274575 (2006-12-01), Lowrey et al.
patent: 2006/0284237 (2006-12-01), Park et al.
patent: 2007/0063180 (2007-03-01), Asano et al.
patent: 2007/0272950 (2007-11-01), Kim et al.
patent: 2007/0020797 (2007-12-01), Pellizzer et al.
Song, Y. et al., “Highly Reliable 256Mb PRAM with Advanced Ring Contact Technology and Novel Encapsulating Technology”, VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on Jun. 13-15, 2006, pp. 118-119.
Song, Y. J. et al., “Advanced ring type contact technology for high density phase change memory”, Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of 35th European, Sep. 12-16, 2005. pp. 513-516.

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