Self-contained reprogramming nonvolatile integrated circuit memo

Details Self-contained reprogramming nonvolatile integrated circuit memo Self-contained reprogramming nonvolatile integrated circuit memo

1996-10-29

1998-03-24

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

36518521, 36518525, 36518529, 365218, G11C 1134, G11C 700

Patent

active

057320187

ABSTRACT:
Nonvolatile integrated circuit memory devices, such as EEPROMs, use unselected shared latching sense amplifiers to latch data from memory cells which are to be reprogrammed after a page erase, and to resupply the latch data to the memory cells which are to be programmed after erase, to thereby internally reprogram the latched data into erased memory cells after page programming. Transferring circuits and methods are provided for transferring data between shared latching sense amplifiers to permit internal reprogramming. High speed and simplified reprogramming of EEPROMs is thereby provided.

REFERENCES:
patent: 5446690 (1995-08-01), Tanaka et al.
patent: 5473563 (1995-12-01), Suh et al.
patent: 5511022 (1996-04-01), Yim et al.

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