Self compensating process for aligning an aperture with crystal

Details Self compensating process for aligning an aperture with crystal Self compensating process for aligning an aperture with crystal

1993-12-01

1996-01-16

Fourson, George

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566471, 156345, 148DIG51, 437228, B23P 1500

Patent

active

054845076

ABSTRACT:
A method for differentially etching an N-sided polygon aperture through a first major surface of a <100> silicon wafer along the <111> planes begins with depositing a mask and defining therein a first intermediate polygon aperture having at least 4N+2 sides, where N is a positive integer. At least one side is generally parallel to the <110> plane, and the intersection of a second side and a third side of the first intermediate polygon is located generally along a major crystal axis perpendicular to the <110> plane. The included angle between the second and third sides expands during anisotropic etching to form one of the N sides of the polygon located along the major axis perpendicular to the <110> plane.

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