Self-bootstrapping device

Details Self-bootstrapping device Self-bootstrapping device

1995-12-27

1999-10-26

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, H01L 27108

Patent

active

059733454

ABSTRACT:
A self-bootstrapping device for sufficiently bootstrapping a bias applied to the gate of a MOS transistor included in the decoder of a semiconductor memory device requiring a high integration degree so that the MOS transistor can transmit the potential from its drain to its source. The self-bootstrapping device includes a first NMOS transistor for a signal transmission, and a second NMOS transistor connected between the gate of the first NMOS transistor and an address decoder circuit, the second NMOS transistor being applied at its gate with a source voltage, wherein the second NMOS transistor comprises a first diffusion region formed at a required portion of a semiconductor substrate, a second diffusion region formed around the first diffusion region while being spaced apart from the first diffusion region by a desired distance, and a gate electrode formed on the semiconductor substrate between the first and second diffusion regions.

REFERENCES:
patent: 3714525 (1973-01-01), Brown et al.
patent: 4620299 (1986-10-01), Remington et al.
patent: 5153683 (1992-10-01), Noda

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