Self-biased ferroelectric space charge capacitor memory

Static information storage and retrieval – Systems using particular element – Ferroelectric

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36518901, G11C 1122

Patent

active

053434218

ABSTRACT:
A ferroelectric space charge capacitor memory device includes a ferroelectric dielectric having a plurality of polarization states; a first electrode attached to the dielectric and establishing a first electric contact potential between the first electrode and the dielectric and a second electrode spaced from the first electrode and attached to the dielectric and establishing a second electric contact potential between the second electrode and the dielectric for generating a differential internal bias voltage on the dielectric which defines a number of capacitive levels, one representative of each of a corresponding number of polarization states and produces an electrical field which is less than the coercive electric field of the dielectric.

REFERENCES:
patent: 4893272 (1990-01-01), Eaton
patent: 5046043 (1991-09-01), Miller

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