Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-09
2010-10-05
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S900000, C257SE29162
Reexamination Certificate
active
07808020
ABSTRACT:
A semiconductor structure is provided that includes a spacer directly abutting a topographic edge of at least one patterned material layer. The spacer is a non-removable polymeric block component of a self-assembled block copolymer. A method of forming such a semiconductor structure including the inventive spacer is also provided that utilizes self-assembled block copolymer technology.
REFERENCES:
patent: 2004/0256700 (2004-12-01), Doris et al.
patent: 2005/0093104 (2005-05-01), Ieong et al.
patent: 2005/0116290 (2005-06-01), de Souza et al.
patent: 2005/0121750 (2005-06-01), Chan et al.
patent: 2005/0260803 (2005-11-01), Halik et al.
patent: WO2006112887 (2006-10-01), None
Jeff Pearse, Organic Spacer Technology, IP. Com Journal, IP.Com Inc., West Henrietta, NY, US, Dec. 31, 2001 XP013001492 ISSN: 1533-0001 p. 30.
Doris Bruce B.
Radens Carl J.
Brown, Esq. Katherine S.
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Warren Matthew E
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