Self-aligned via process for preventing poison via formation

Details Self-aligned via process for preventing poison via formation Self-aligned via process for preventing poison via formation

1998-10-21

2000-01-11

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438734, 438738, 438740, H01L 2100

Patent

active

060135794

ABSTRACT:
A self-aligned via process to prevent the via poisoning includes forming a hydrogen silsesquioxane layer on the substrate and over a pre-formed metal layer, forming an etching stop layer on the hydrogen silsesquioxane layer, forming an oxide layer on the etching stop layer, and then proceeding with a two-step etching process to form a via. The two-step etching process first patterns the oxide layer using a patterned photoresist layer as a mask, and then patterns the etching stop layer together with the hydrogen silsesquioxane layer using the patterned oxide layer as a mask. Because the etching stop layer prevents the hydrogen silsesquioxane layer from reacting with the oxygen plasma during the photoresist layer removal process, via poisoning is eliminated.

REFERENCES:
patent: 5783494 (1998-07-01), Sakurai et al.

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