Self-aligned tungsten-filled via process and via formed thereby

Details Self-aligned tungsten-filled via process and via formed thereby Self-aligned tungsten-filled via process and via formed thereby

1987-12-23

1991-02-26

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430316, 430317, 430318, 437192, 437195, 437228, 437229, G03C 500

Patent

active

049961330

ABSTRACT:
Via patterns (16, 18) are applied to a first interlevel oxide layer (58) down to a metal layer (52) to define a plurality of orifices. These orifices (61, 63) are filled with tungsten by selective chemical vapor deposition. A first level conductor pattern (10, 12, 14) is then used to etch away the first insulator layer (58) and portions of plugs (62, 64) that are outside the first level conductor pattern. This first level conductor pattern is also used for a subsequent first level metal etch. The entire structure is then covered with a self-planarizing oxide layer (82), which is subsequently etched back to expose the top surfaces (66, 68) of tungsten plugs (62, 64).

REFERENCES:
patent: 4614021 (1986-09-01), Hulseneh
patent: 4764484 (1988-08-01), Mo
patent: 4789648 (1988-12-01), Chen et al.

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