Self-aligned trenched-channel lateral-current-flow transistor

Details Self-aligned trenched-channel lateral-current-flow transistor Self-aligned trenched-channel lateral-current-flow transistor

1998-04-29

2000-09-12

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257333, H01L 2978

Patent

active

061181617

ABSTRACT:
A transistor (100) having a strip channel or channels (108) in which the current flow in is the lateral direction between source (110) and drain (112). The gate (116) is located on the sidewalls and, if desired, the top of the strip channel (108). In a preferred embodiment of the invention, a disposable gate process is used that allows the source (110) and drain (112) regions to be self-aligned to the gate (116).

REFERENCES:
patent: 4996574 (1991-02-01), Shirasaki
patent: 5115289 (1992-05-01), Hisamoto et al.
patent: 5757038 (1998-05-01), Tiwari et al.

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