Self-aligned transistor device including a patterned refracting

Details Self-aligned transistor device including a patterned refracting Self-aligned transistor device including a patterned refracting

1995-11-15

1998-09-29

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 77, 257336, 257340, H01L 310312, H01L 2976, H01L 2994, H01L 31062

Patent

active

058148590

ABSTRACT:
A semiconductor device includes a semiconductor substrate having an epitaxial layer surface opposite a drain contact surface; a semiconductor layer adjacent to the epitaxial layer surface of the substrate, the semiconductor layer including material of a first conductivity type; a patterned refractory dielectric layer adjacent to the semiconductor layer; a base region of implanted ions in the semiconductor layer, the base region being of a second conductivity type; a source region of implanted ions in the base region, the source region being of the first conductivity type; a gate insulator layer adjacent to at least a portion of the source and base regions of the semiconductor layer; and a gate electrode over a portion of the gate insulator layer, adjacent to and in physical contact with an outer edge of the patterned refractory dielectric layer, and over at least a portion of the base region between the source region and the patterned refractory dielectric layer.

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