Self-aligned T-gate carbon nanotube field effect transistor...

Details Self-aligned T-gate carbon nanotube field effect transistor... Self-aligned T-gate carbon nanotube field effect transistor...

2008-07-29

2010-12-28

Fahmy, Wael M (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S195000, C438S196000, C438S199000, C438S587000, C438S591000, C257S346000, C257S024000, C257SE29069, C257SE21051

Reexamination Certificate

active

07858454

ABSTRACT:
A method is provided for forming a self-aligned carbon nanotube (CNT) field effect transistor (FET). According to one feature, a self-aligned source-gate-drain (S-G-D) structure is formed that allows for the shrinking of the gate length to arbitrarily small values, thereby enabling ultra-high performance CNT FETs. In accordance with another feature, an improved design of the gate to possess a “T”-shape, referred to as the “T-Gate,” thereby enabling a reduction in gate resistance and further providing an increased power gain. The self-aligned T-gate CNT FET is formed using simple fabrication steps to ensure a low cost, high yield process.

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PCT Notification of Transmittal of the International Search Report, and the Written Opinion of the International Searching Authority, or the Declaration (PCT Rule 44.1), Jan. 30, 2009, 12 pages.

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