Self-aligned silicide process

Details Self-aligned silicide process Self-aligned silicide process

1996-06-25

1999-03-30

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 438683, 438754, H01L 2128, H01L 21306

Patent

active

058889035

ABSTRACT:
A self-aligned silicide method with Ti deposition, reaction, strip of TiN with selectivity to TiSi.sub.2 consisting of a water solution of H.sub.2 O.sub.2 with possible small amounts of NH.sub.4 OH, phase conversion anneal, and then strip of TiSi.sub.2 filaments with a water solution of H.sub.2 O.sub.2 plus NH.sub.4 OH.

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