Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2011-08-30
2011-08-30
Roman, Angel (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S151000, C438S177000, C438S570000, C438S571000, C257SE21409, C257SE21450
Reexamination Certificate
active
08008142
ABSTRACT:
A Schottky barrier diode comprises a doped guard ring having a doping of a second conductivity type in a semiconductor-on-insulator (SOI) substrate. The Schottky barrier diode further comprises a first-conductivity-type-doped semiconductor region having a doping of a first conductivity type, which is the opposite of the second conductivity type, on one side of a dummy gate electrode and a Schottky barrier structure surrounded by the doped guard ring on the other side. A Schottky barrier region may be laterally surrounded by the dummy gate electrode and the doped guard ring. The doped guard ring includes an unmetallized portion of a gate-side second-conductivity-type-doped semiconductor region having a doping of a second conductivity type. A Schottky barrier region may be laterally surrounded by a doped guard ring including a gate-side doped semiconductor region and a STI-side doped semiconductor region. Design structures for the inventive Schottky barrier diode are also provided.
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Botula Alan B.
Joseph Alvin J.
Norris Alan D.
Rassel Robert M.
Shi Yun
Canale Anthony J.
International Business Machines - Corporation
Roman Angel
Scully , Scott, Murphy & Presser, P.C.
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