Self-aligned sacrificial oxide for shallow trench isolation

Details Self-aligned sacrificial oxide for shallow trench isolation Self-aligned sacrificial oxide for shallow trench isolation

1997-05-15

1998-03-24

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438427, 438435, 438437, 438221, 438296, 148DIG50, H01L 2176

Patent

active

057312419

ABSTRACT:
The present invention provides a method of manufacturing a sacrificial self aligned sub-atmospheric chemical vapor deposition (SACVD) O.sub.3 TEOS layer 50 70 over a trench oxide 40 to protect the trench oxide from excessive subsequent etch steps. The SACVD O.sub.3 TEOS layer has a higher deposition rate over the trench oxide layer 40 than over the surrounding non-trench thermally grown pad oxides. The trench oxide is preferably formed using a process of PECVD, LPTEOS, or O.sub.3 -TEOS. The invention provides two preferred embodiments: (1) a first self aligned sacrificial O.sub.3 TEOS oxide layer 50 deposited before the pad oxide etch and (2) a second self aligned sacrificial O.sub.3 TEOS oxide layer 70 deposited before the sacrificial implant oxide etch. The invention can be applied in a variety of situations where the trench oxide is exposed to damaging etches.

REFERENCES:
patent: 5275965 (1994-01-01), Manning
patent: 5453395 (1995-09-01), Lur
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5536681 (1996-07-01), Jang et al.
patent: 5665635 (1997-09-01), Kwon et al.
"Trench Isolation Technology with Lum Depth n-and p-wells for a Full-CMOS SRAM Cell with a 0.4um nt/pt spacing" by K. Ishimaru et al., 1994 Symposium VLSI Technology Digest of Technical Papers, pp. 97-98 (1994).

Affiliated with

Also associated with

Rating

Self-aligned sacrificial oxide for shallow trench isolation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned sacrificial oxide for shallow trench isolation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned sacrificial oxide for shallow trench isolation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2288657