Self-aligned nano field-effect transistor and its fabrication

Details Self-aligned nano field-effect transistor and its fabrication Self-aligned nano field-effect transistor and its fabrication

2009-10-01

2011-11-22

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S365000, C257S411000, C977S938000

Reexamination Certificate

active

08063451

ABSTRACT:
Our invention discloses a self-aligned-gate structure for nano FET and its fabrication method. One dimension semiconductor material is used as conductive channel, whose two terminals are source and drain electrodes. Gate dielectric grown by ALD covers the area between source electrode and drain electrode, opposite sidewalls of source electrode and drain electrode, and part of upper source electrode and drain electrode. Gate electrode is deposited on gate dielectric by evaporation or sputtering. Total thickness of gate dielectric and electrode must less than source electrode or drain electrode. Gate electrode between source electrode and drain electrode is electrically separated from source and drain electrode by gate dielectric. The fabrication process of this self-aligned structure is simple, stable, and has high degree of freedom. Nearly the whole conductive channel between source electrode and drain electrode is covered by gate electrode, so the control efficiency of the gate over the conductive channel, described as transconductance, can be greatly enhanced. Additionally, there is no restriction on material of gate dielectric or electrode, so the devices' threshold voltage can be adjusted to satisfy the requirements of large scale integrated circuit.

REFERENCES:
patent: 2008/0063566 (2008-03-01), Matsumoto et al.
Javey et al, “Carbon Nanotube Field Effect Transistors with Integrated Ohmic Contacts and High-k Gate Dielectrics”, Feb. 20, 2004.
Javey et al., Ballistic Carbon Nanotube Field-Effect Transistors, Nature 2003, pp. 654-657 vol. 424.
Zhang et al., Doping-Free Fabrication of Carbon Nanotube Based Ballistic CMOS Devices and Circuits, Nano Letters 2007, pp. 3603-3607, vol. 7, No. 12.
Javey et al., Carbon Nanotube Field-Effect Transistors With Integrated Ohmic Contacts and High-K Gate Dielectrics, Nano Letters 2004, pp. 447-450, vol. 4, No. 3.

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