Self-aligned method for integrated circuit manufacture

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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148 15, 148175, 357 91, H01L 21265

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active

039486940

ABSTRACT:
A method for manufacturing integrated circuits provides total self-alignment of all critically positioned device regions. Self-alignment is accomplished by a combination of selectively etchable thin layers on the surface of a semiconductor body. An initially formed predetermined pattern of openings defines all active regions of the device. Selective introduction of impurities in sub-sets of this predetermined pattern form regions of a semiconductor device in a totally self-aligned manner while ion implantation through all overlying layers provides for the formation of further shallow device regions irrespective of the predetermined pattern of openings.

REFERENCES:
patent: 3595716 (1971-07-01), Kerr et al.
patent: 3704177 (1972-11-01), Beale
patent: 3783047 (1974-01-01), Paffen et al.
patent: 3789504 (1974-02-01), Jaddam
patent: 3793088 (1974-02-01), Eckton, Jr.

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