Self-aligned metal-oxide-compound semiconductor device and metho

Details Self-aligned metal-oxide-compound semiconductor device and metho Self-aligned metal-oxide-compound semiconductor device and metho

1998-02-12

1999-08-31

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257192, 257631, H07L 2978

Patent

active

059457180

ABSTRACT:
A self-aligned enhancement mode metal-oxide-compound semiconductor FET (10) includes a stoichiometric Ga.sub.2 O.sub.3 gate oxide layer (14) positioned on upper surface (16) of a compound semiconductor wafer structure (13). The stoichiometric Ga.sub.2 O.sub.3 layer forms an atomically abrupt interface with the compound semiconductor wafer structure. A refractory metal gate electrode (17) is positioned on upper surface (18) of the stoichiometric Ga.sub.2 O.sub.3 gate oxide layer (14). The refractory metal is stable on the stoichiometric Ga.sub.2 O.sub.3 gate oxide layer at elevated temperature. Self-aligned source and drain areas, and source and drain contacts (19, 20) are positioned on the source and drain areas (21, 22).

REFERENCES:
patent: 4416952 (1983-11-01), Nishizawa et al.
patent: 4843450 (1989-06-01), Kirchner et al.
patent: 5124762 (1992-06-01), Childs et al.
patent: 5451548 (1995-09-01), Hunt et al.
patent: 5550089 (1996-08-01), Dutta et al.
patent: 5597768 (1997-01-01), Passlack et al.
patent: 5665658 (1997-09-01), Passlack
An article entitled "Thermodynamic and photochemical stability of low interface state density Ga.sub.2 O.sub.3 -GaAs structures fabricated by in situ molecular beam epitaxy" from Appl. Phys. Lett. 69(3), M. Passlack et al., pp. 302-304 (Jul. 15, 1996).
An article entitled "Recombination velocity at oxide-GaAs interfaces fabricated by in situ molecular beam epitaxy" from Appl. Phys. Lett. 68(25), M. Passlack et al., pp. 3605-3607 (Jun. 17, 1996).
An article entitled "Quasistatic and high frequency capacitance-voltage characterization of Ga.sub.2 O.sub.3 -GaAs structures fabricated by in situ molecular beam epitaxy" from Appl. Phys. Lett. vol. 68, No. 8, M. Passlack et al., pp. 1099-1101 (Feb. 19, 1996).
An article entitled "Anisotropy of electrical and optical properties in B-Ga.sub.2 O.sub.3 single crystals" from Appl. Phys. Lett. 71(7), N. Ueda et al., pp. 933-935 (Aug. 18, 1997).
An article entitled "Synthesis and control of conductivity of ultraviolet transmitting B-Ga.sub.2 O.sub.3 single crystals" from Appl. Phys. Lett. 70(26), N. Ueda, pp. 3561-3563 (Jun. 30, 1997).

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