Self-aligned metal nitride for copper passivation

Details Self-aligned metal nitride for copper passivation Self-aligned metal nitride for copper passivation

1998-05-20

2000-09-05

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438659, 438687, 438724, 438775, H01L 214763

Patent

active

061142387

ABSTRACT:
A method of fabricating metallization. A metal nitride layer is formed on the exposed surface of the metal layer. The metal nitride layer is used as a barrier layer to prevent short circuit, which is produced by metal diffusing into the inter-metal dielectrics. Therefore, the reliability of devices can be improved.

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patent: 5674787 (1997-10-01), Zhao et al.
patent: 5744376 (1998-04-01), Chan et al.
patent: 5773363 (1998-06-01), Derderian et al.
patent: 5793112 (1998-08-01), Hasewaga et al.
patent: 5877557 (1999-03-01), Zawaideh

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