Self-aligned masks using multi-temperature phase-change...

Details Self-aligned masks using multi-temperature phase-change... Self-aligned masks using multi-temperature phase-change...

2011-08-16

2011-08-16

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S699000, C438S673000, C438S759000, C438S760000, C257SE21023

Reexamination Certificate

active

07998868

ABSTRACT:
A method of forming a pattern includes forming a first layer on a substrate, forming a second layer on the first layer, depositing a multi-temperature phase-change material on the second layer, patterning the second layer using the multi-temperature phase-change material as a mask, reflowing the multi-temperature phase-change material, and patterning the first layer using the reflowed multi-temperature phase-change material as a mask.

REFERENCES:
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patent: 6534225 (2003-03-01), Flanders et al.
patent: 6742884 (2004-06-01), Wong et al.
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patent: 7344928 (2008-03-01), Wong et al.
patent: 2003/0027082 (2003-02-01), Wong et al.
patent: 2004/0110094 (2004-06-01), Chen et al.

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