Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-08-08
1999-12-07
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438159, 438302, H01L 2100
Patent
active
059982462
ABSTRACT:
The present invention is related to a self-aligned manufacturing method of a thin film transistor for forming a single-crystal bottom-gate and an offset drain. The main object of the present invention is to disclose two manufacturing methods to attain the self-aligned manufacturing method of a thin film transistor for forming a single-crystal bottom-gate and an offset drain. In the first method, a photoresistor and a silicon nitride are used to form a dual stack as a mask, further a large-angle ion implant is used to form a thin film transistor with a single-crystal bottom-gate and an offset drain. In the second method, the source side is protected by a dual stack formed by a P+ polysilicon layer which may be discarded selectively and a silicon nitride and an insulation spacer of sidewall in order to selectively discard the silicon nitride on the drain side, thus the object of a thin film transistor with a single-crystal bottom-gate and an offset drain is obtained.
REFERENCES:
patent: 5355006 (1994-10-01), Iguchi
Huang Tiao-Yuan
Lin Horng-Chih
Lattin Christopher
National Science Council of Republic of China
Niebling John F.
LandOfFree
Self-aligned manufacturing method of a thin film transistor for does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Self-aligned manufacturing method of a thin film transistor for , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned manufacturing method of a thin film transistor for will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-822929