Self-aligned manufacturing method, and manufacturing method...

Details Self-aligned manufacturing method, and manufacturing method... Self-aligned manufacturing method, and manufacturing method...

2006-01-24

2008-10-07

Chen, Kin-Chan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S585000, C438S694000

Reexamination Certificate

active

07432206

ABSTRACT:
A method for manufacturing a self aligned narrow structure over a wider structure based on mask trimming. A method for manufacturing a memory device comprises forming an electrode layer on a substrate which comprises circuitry made using front-end-of-line procedures. The electrode layer includes a first electrode and a second electrode, and an insulating member between the first and second electrodes for each phase change memory cell to be formed. A patch of memory material is formed on the top surface of the electrode layer across the insulating member for each memory cell to be formed. The patch and the first and second electrodes are formed using a self-aligned process based on mask trimming.

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