Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1989-08-14
1990-07-24
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156644, 156646, 156653, 156656, 156657, 1566591, 313309, 313351, 357 55, 437 4, 437 41, H01L 21306, B44C 122, C03C 1500, C23F 102
Patent
active
049433431
ABSTRACT:
Conical field emitter elements are formed on a surface of a substrate after which a layer of metal is deposited on top of the substrate surface and over the field emitter elements. A layer of oxide is then deposited over the metal layer. Another layer of metal is deposited over the layer of oxide to form a gate metal layer. A layer of photoresist is then deposited over the gate metal layer. The layer of photoresist is then plasma etched in an oxygen atmosphere to cause portions of the photoresist above respective field emitter elements to be removed and provide self-aligned holes in the photoresist over each of the field emitter elements. The size of the holes may be controlled by appropriately controlling process parameter, including plasma etching time and power and/or initial photoresist thickness. The exposed gate metal layer is etched using the layer of photoresist as a mask. The photoresist layer is removed, and the layer of oxide is etched to expose the field emitter elements. Another oxide layer and an anode metal layer also may be formed over the gate metal layer to produce a self-aligned triode structure.
REFERENCES:
patent: 3453478 (1969-07-01), Shoulders et al.
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3921022 (1975-11-01), Levine
patent: 3998678 (1976-12-01), Fukase et al.
patent: 4008412 (1977-02-01), Yuito et al.
patent: 4307507 (1981-12-01), Gray et al.
patent: 4513308 (1985-04-01), Greene et al.
Gray et al., "A Vacuum Field Effect Transistor Using Silicon Field Emitter Arrays", IEDM, 1986, pp. 776-779.
C. A. Spindt, "A Thin-Film Field-Emission Cathode", Journal of Applied Physics, vol. 39, No. 7, Jun. 1986, pp. 3504-3505.
C. A. Spindt et al., "Physical Properties of Thin-Film Field Emission Cathodes with Molybdenum Cones", Journal of Applied Physics, vol. 47, No. 12, Dec. 1976, pp. 5248-5263.
C. A. Spindt et al., "Recent Progress in Low-Voltage Field-Emission Cathode Development", Journal de Physique, vol. 45, No. C-9, Dec. 1984, pp. 269-278.
Bardai Zaher
Forman Ralph
Lamb Arlene E.
Longo Robert T.
Manoly Arthur E.
Coble Paul M.
Denson-Low Wanda K.
Gudmestad Terje
Powell William A.
LandOfFree
Self-aligned gate process for fabricating field emitter arrays does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Self-aligned gate process for fabricating field emitter arrays, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned gate process for fabricating field emitter arrays will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1266469